IBM Research Center Implements Memory Breakthrough
Scientists have been exploring a type of storage technology called Phase Change Memory (PCM). So far, however, the PCM used in some applications has been somewhat lacking, but it may change soon.
Scientists at the IBM Research Center have made significant breakthroughs in reliably storing three bits of data per cell. IBM said it will provide a milestone for rapid and easy storage of mobile devices and the Internet of Things.
PCM has read/write speed, non-volatile and low-density features, making it the best choice for existing storage technology. Unlike DRAM, PCM does not lose data when the power is turned off. What's more, the technology can withstand at least 10 million write cycles, compared to only about 3000 write cycles on an average USB flash drive.
PCM can be used as a stand-alone product or in a hybrid application where it acts as a very fast cache for flash storage. As IBM explained, the smartphone's operating system can be stored in the PCM, enabling it to boot in just a few seconds.
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