Nano-resistor: control material oxygen atom content adjustment resistance

This figure is taken with an electron microscope and shows a series circuit of two small chrome oxide resistors linked by quantum phase-slipping nanowires. (Nanosils are too small to be visible on this scale) Source: James Sagar, Nick Constantino, Chris Nash, Jon Fenton and Paul Warburton / University College London, UK This image was taken with an electron microscope, A series circuit of two small chromium oxide resistors connected by nanowires. (Nanosils are too small to be visible on this scale) Source: James Sagar, Nick Constantino, Chris Nash, Jon Fenton and Paul Warburton / University College London, UK

纳米电阻器:控制材料氧原子含量调节阻值

A new study in the Journal of Applied Physics shows that the electrical properties of the new chromium oxide sheet resistors can be tuned by controlling the oxygen content of the material.

December 9, 2014 Researchers at the London Nanotechnology Center in Washington recently created a new, compact, high-resistance resistor for quantum circuits. This resistor has driven the application of quantum devices in computational and basic physics research. The thin film resistors are described by researchers in an article in the journal Applied Physics published by the American Physical Confederation.

One of the applications of this resistor is its use in quantum phase-shift circuits (QPS). This circuit is made of a very narrow and thin superconducting wire, which uses a basic, counterintuitive quantum character called the quantum tunneling effect to move the magnetic flux back and forth through the superconducting wire Barriers - This is not possible in our conventional world of classical mechanics.